SiC MOSFET 1200V Series
CETC 55th Institute SiC MOSFET 1200V Series – China's first mass-produced 1200V SiC MOSFET product line with fully validated planar process reliability. Performance matches top-tier competitors like Cree, ST, and Onsemi, with a superior on-resistance temperature coefficient. Available in plastic, metal-can, and bare die packages for applications including main drive inverters in new energy vehicles, PV inverters, energy storage PCS, and industrial power supplies. Over 1400k units shipped; AEC-Q101 qualified.
Product Specifications
Project | Parameters |
Model Range | WM1A025120K1 / WM2J040120Y / WM2J075120Y / WM1A080120L1 / WM2J016120H, etc. |
Maximum Drain-Source Voltage | 1200V |
On-resistance range | 16 mΩ ~ 160 mΩ |
Continuous Drain Current | 18A~268A（25℃） |
Recommended Gate Voltage | -4V/+18V or -5V/+20V |
Threshold Voltage | 2.7V~2.8V |
Typical On-Resistance (25mΩ) | 25mΩ, RDS(on) temperature coefficient outperforms Cree C2M0025120D |
Packaging Form | TO-247-2 / TO-247-3 / TO-247-4 / TOLL / DFN 8×8 / TO-252 / SMD-1 / SMD-2G / TO-254 |
Operating Junction Temperature | -55℃~+175℃ |
Quality Level | Military Grade (J) / Commercial Grade (A) |
Pricing Details
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