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BJT Silicon Bipolar Power Switching Transistor

BJT Silicon Bipolar Power Switch Transistor

CETC 55th Institute's BJT series includes NPN and PNP types, with VCEO ranging from 40V to 300V and collector current of 0.2A~5A. Available as bare die, metal packages (SOT-23C/SMD-0.2/SMD-0.5), plastic packages (TO-252), and space-grade options. Ideal for power switching, signal amplification, and driver circuits.

Product Specifications

Project

Parameters

Polarity

NPN / PNP

VCEO Scope

40V / 60V / 80V / 150V / 300V

Collector Current

0.2A / 0.6A / 1A / 5A

NPN Model Example

WS3904HA(40V/0.2A) / WS2222HA(60V/0.6A) / WS3700HA(80V/1A) / WS5154C(80V/5A) / WS5551HB(150V/1A) / WS3441C(150V/5A) / WS3439HB(300V/1A) / WS5667C(300V/5A)

Packaging Form

Bare Die / SOT-23C / SMD-0.2 / SMD-0.5 / TO-252

Aerospace-grade model

WS3904HR / WS2222HR / WS3700HR / WS5154HR / WS5551HR / WS3441HR / WS3439HR / WS5667HR

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