SiC MOS Module Products
CETC 55th Institute SiC MOS modules offer three topologies: SMPD-packaged half-bridge, DIP-packaged H-bridge, and DIP-packaged three-phase bridge. The SMPD package features top-side cooling with integrated insulation rated at 3kVrms. The dual-in-line (DIP) package ensures low impedance, optimal thermal resistance, and high-voltage isolation for bus voltages up to 800V. The three-phase bridge module uses a Cu-AlN-Cu DBC substrate to enhance thermal management. Ideal for electric vehicle drives, charging stations, energy storage PCS, and industrial variable frequency drives.
Product Specifications
Project | Parameters |
Half-Bridge Module (SMPD) | WMH009M065A1J (650V/9mΩ) / WMH016M120A1J (1200V/16mΩ) |
H-Bridge Module (DIP) | WMD009M065B1J (650V/9mΩ) / WMD016M120B1J (1200V/16mΩ) |
Three-Phase Bridge Module (DIP) | WMT009M065B1J (650V/9mΩ) / WMT016M120B1J (1200V/16mΩ) |
Encapsulation Features | SMPD: Top-mounted heat dissipation with integrated insulation, withstand voltage 3kVrms;; DIP: Low impedance, 800V bus voltage |
Topology | Half-Bridge / H-Bridge (Vienna Rectifier) / Three-Phase Bridge |
Built-in NTC | Yes (Temperature Monitoring) |
Pricing Details
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