GaN power devices
CETC No. 55 Institute's GaN power devices leverage GaN-on-SiC technology to deliver wideband, high-power-density, and high-efficiency microwave power amplification solutions. Products cover L through Ka bands and serve applications including radar, electronic warfare, satellite communications, and 5G base stations. There are only 3 domestic manufacturers of microwave millimeter-wave T/R component chips; No. 55 Institute is among them.
Product Specifications
Project | Parameters |
Product Type | GaN Power Amplifier / GaN Switch Chip / GaN PA Chip |
Craftsmanship | GaN-on-SiC HEMT |
Operating Frequency Band | L-band to Ka-band |
Features | Wideband / High Power Density / High Efficiency / High Operating Temperature |
App | Active Phased Array Radar / Electronic Warfare / Satellite Communication / 5G Base Station |
Industry Standing | One of only 3 entities in China with independent design and mass production capabilities for GaN microwave chips |
Pricing Details
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Product Details
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