Microwave and millimeter-wave chips
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Si/GaAs RF Switch
CETC 55 Institute Si/GaAs RF Switches deliver high isolation and low insertion loss. Silicon-based solutions for low-frequency bands; GaAs-based solutions for microwave and millimeter-wave bands.
RF front-end chips
CETC 55th Institute's RF front-end chip integrates LNA, PA, switches, and more to deliver a high-integration RF solution. Ideal for mobile terminals and IoT devices.
GaAs Power Amplifier
CETC 55th Institute GaAs Power Amplifier: High-linearity, high-efficiency microwave power amplifier IC based on GaAs pHEMT/MMIC technology. Ideal for mobile communication base stations and radar transceiver modules.
GaAs Low-Noise Amplifier
CETC 55th Institute GaAs Low-Noise Amplifier (LNA): Ultra-low noise figure, high gain. Ideal for sensitive applications such as receiver front-ends, radar receivers, and satellite communication terminals.
GaN Power Devices
CETC No. 55 Institute's GaN power devices leverage GaN-on-SiC technology to deliver wideband, high-power-density, and high-efficiency microwave power amplification solutions. Products cover L through Ka bands and serve applications including radar, electronic warfare, satellite communications, and 5G base stations. There are only 3 domestic manufacturers of microwave millimeter-wave T/R component chips; No. 55 Institute is among them.