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Silicon Carbide Devices
Silicon devices
Power Devices
Microwave and Millimeter-Wave Chips
Passive Chip for Filters
Photonic-Electronic Integration
Photoelectric Detection
Terahertz Module
SIP Module
Radio Frequency
Chip Packaging Components
Power Control and Micro-Assembly Components
TR Chips and Modules
Variable Frequency and Frequency Source
Si/GaAs RF Switch
CETC 55 Institute Si/GaAs RF Switches deliver high isolation and low insertion loss. Silicon-based solutions for low-frequency bands; GaAs-based solutions for microwave and millimeter-wave bands.
RF front-end chips
CETC 55th Institute's RF front-end chip integrates LNA, PA, switches, and more to deliver a high-integration RF solution. Ideal for mobile terminals and IoT devices.
SiC MOSFET 1700V Series
CETC 55 Institute SiC MOSFET 1700V Series, designed for high-voltage applications including photovoltaic string inverters, energy storage systems, rail transit auxiliary power supplies, and industrial high-power power supplies. Available in both plastic and metal hermetic packages; the 1000mΩ version features a compact SOT-223-3 package.
SiC MOSFET 1200V Series
CETC 55th Institute SiC MOSFET 1200V Series – China's first mass-produced 1200V SiC MOSFET product line with fully validated planar process reliability. Performance matches top-tier competitors like Cree, ST, and Onsemi, with a superior on-resistance temperature coefficient. Available in plastic, metal-can, and bare die packages for applications including main drive inverters in new energy vehicles, PV inverters, energy storage PCS, and industrial power supplies. Over 1400k units shipped; AEC-Q101 qualified.
SiC Ultra-High-Voltage MOSFET (3300V~10000V)
CETC 55th Institute's SiC super-high-voltage MOSFETs feature high single-chip voltage ratings and fast switching speeds. Compared to IGBTs, they reduce volume, weight, and power losses by over 90%. Ideal for high-voltage power supplies, module packaging, rail transit, and high-voltage transmission applications. Available in 3300V, 6500V, 10000V, and other specifications.
SiC MOS Module Products
CETC 55th Institute SiC MOS modules offer three topologies: SMPD-packaged half-bridge, DIP-packaged H-bridge, and DIP-packaged three-phase bridge. The SMPD package features top-side cooling with integrated insulation rated at 3kVrms. The dual-in-line (DIP) package ensures low impedance, optimal thermal resistance, and high-voltage isolation for bus voltages up to 800V. The three-phase bridge module uses a Cu-AlN-Cu DBC substrate to enhance thermal management. Ideal for electric vehicle drives, charging stations, energy storage PCS, and industrial variable frequency drives.
SiC High-Current Module
CETC 55th Institute SiC high-current MOS modules feature easy-to-install packaging, extremely low thermal resistance, and excellent heat dissipation. Ideal for high-current, high power density applications. Available in SOT-227 packages.
SiC Schottky Diode (650V~20000V)
CETC 55th Institute's SiC Schottky Barrier Diodes (SBD), fourth-generation products, deliver optimal performance in current density and surge current compared to leading international brands like Cree, Rohm, ST, and Onsemi. Features include low switching loss, zero reverse recovery, and high-temperature/high-voltage tolerance, making them ideal replacements for traditional Si fast-recovery diodes. Available in plastic packages (TO-252/TO-263/TO-220/TO-247/DFN, etc.), gold-sealed SMD series, and bare die options. Covers a full voltage range of 650V~20000V and current ratings from 1A to 200A. Ideal for photovoltaic inverters, new energy vehicles, switch-mode power supplies, and industrial variable-frequency drives.
SiC Detectors (UV Detection / Nuclear Detection)
CETC 55 Institute's SiC detectors leverage the inherent high-temperature and radiation-hardness advantages of silicon carbide, delivering products for nuclear detection and UV detection. In nuclear detection, SiC semiconductor detectors replace traditional silicon-based ones, offering superior high-temperature and radiation resistance. For UV detection, they feature a spectral response range of 200~380 nm (solar-blind), excellent temperature stability, fast response speed, and low dark current. Ideal for applications such as UV index monitoring, flame detection, and environmental monitoring. We offer custom processing for 6-inch SiC detectors.
SiC radiation-hardened devices
CETC 55th Institute's SiC radiation-hardened devices, including SiC radiation-hardened diodes and MOSFETs. SiC materials inherently exhibit superior radiation tolerance, making them ideal for high-radiation environments such as aerospace and nuclear industries. The SiC diodes have passed radiation testing; the SiC MOS radiation-hardened product is currently under development.
SiC MOSFET 650V Series
CETC 55 Institute's SiC MOSFET 650V Series features a planar process with fully validated reliability. Designed to replace imported products and achieve domestic substitution, it offers the most comprehensive product lineup in China. With fast switching speeds, low on-resistance, and excellent high-temperature performance, this series supports multiple package options including plastic (DFN, TOLL, TO-252, TO-263, SOT-223, etc.), metal cans (SMD series), and bare die. Ideal for applications such as PV inverters, EV onboard chargers (OBC), charging stations, switch-mode power supplies, and industrial variable frequency drives.
Si TVS transient voltage suppression diode
CETC 55th Institute Si TVS Diodes feature planar or mesa structures with SiO2 or glass passivation for high reliability. Peak pulse power ratings include 600W, 1500W, 3000W, and 5000W. Packaged in surface-mount metal-ceramic hermetic housings, they offer superior moisture and salt spray resistance compared to standard plastic-molded products, along with enhanced radiation tolerance for aerospace applications. These diodes serve as direct replacements for imported counterparts.
BJT Silicon Bipolar Power Switch Transistor
CETC 55th Institute's BJT series includes NPN and PNP types, with VCEO ranging from 40V to 300V and collector current of 0.2A~5A. Available as bare die, metal packages (SOT-23C/SMD-0.2/SMD-0.5), plastic packages (TO-252), and space-grade options. Ideal for power switching, signal amplification, and driver circuits.
Microwave Power Devices
CETC 55th Institute microwave power devices, including standard power transistors, packaged miniaturized high-gain modules, and chip-mounted miniaturized power amplifier modules. Operating frequency range DC~2GHz, DC gain 50~300. Built with LDMOS/VDMOS technology, ideal for RF power amplification, broadcast communications, radar transmitters, and more.
GaAs Power Amplifier
CETC 55th Institute GaAs Power Amplifier: High-linearity, high-efficiency microwave power amplifier IC based on GaAs pHEMT/MMIC technology. Ideal for mobile communication base stations and radar transceiver modules.
GaAs Low-Noise Amplifier
CETC 55th Institute GaAs Low-Noise Amplifier (LNA): Ultra-low noise figure, high gain. Ideal for sensitive applications such as receiver front-ends, radar receivers, and satellite communication terminals.
GaN Power Devices
CETC No. 55 Institute's GaN power devices leverage GaN-on-SiC technology to deliver wideband, high-power-density, and high-efficiency microwave power amplification solutions. Products cover L through Ka bands and serve applications including radar, electronic warfare, satellite communications, and 5G base stations. There are only 3 domestic manufacturers of microwave millimeter-wave T/R component chips; No. 55 Institute is among them.
Terahertz Module
CETC 55th Institute Terahertz Module operates in the terahertz frequency range (0.1–10 THz) for cutting-edge applications such as security screening imaging, high-speed communications, and spectroscopic detection. Built upon the institute's extensive technical expertise in microwave and millimeter-wave devices.
RF subsystem module
CETC 55th Institute's RF microsystem modules include T/R components, RF modules, and microwave multifunctional modules. Leveraging microwave millimeter-wave chips and advanced packaging technologies, the institute has achieved serial, engineering, and mass production capabilities spanning from core chips to module components and RF microsystems. These products are widely applied in mobile communications, radar systems, and electronic warfare.
S-band transceiver system
The S-band transceiver system is a radar backend device with 76 receive channels and 2 transmit channels. It features an integrated local oscillator and built-in self-test capabilities. Utilizing agile frequency agility technology, it enables rapid frequency hopping, while ultra-low phase noise ensures high signal quality and strong interference resistance. Its blind-mate quick-disconnect design simplifies on-site maintenance and rapid deployment, making it ideal for S-band phased array radar receive and transmit applications.
Photodetector Chip
InGaAs Photodetector Chip, Near-Infrared
Integrated RF Front-End Module
L-band integrated RF front-end module
Power Divider Chip
GaAs Power Divider, 1-way to 2, operating frequency 2~18 GHz
T/R module chipset
L-band T/R component chipset with integrated amplitude and phase control
Upconverter Chip
L-band upconverter chip, high linearity
Photodetector Chip
Si photodetector chip, visible light
Integrated RF Front-End Module
S-band integrated RF front-end module
Power combiner chip
GaAs Power Combiner, 2 into 1, Operating Frequency 6~18 GHz
T/R module chipset
S-band T/R component chipset, high power
Upconverter Chip
S-band upconverter chip
Avalanche photodiode
InGaAs APD Avalanche Photodiode, High Gain
Integrated RF Transceiver Chip
C-band RF transceiver integrated chip
Microassembly Interconnect Substrate
High-Density Micro-Assembly Interconnect Substrate, Multi-Layer Structure
T/R module chipset
C-band T/R module chipset, broadband
downconverter chip
C-band downconverter chip, low noise
Avalanche photodiode
Si APD Avalanche Photodiode
Integrated RF Transceiver Chip
X-band integrated RF transceiver chip
Low-Temperature Co-fired Ceramic (LTCC) Substrate
LTCC Ceramic Substrates for High-Frequency Applications
T/R module chipset
X-band T/R module chipset, miniaturized
downconverter chip
X-band downconverter chip
Laser Diode Chip
DFB laser diode chip, single longitudinal mode
Multi-channel RF chip
4-channel multi-channel RF chip, L-band
Thin-film circuit substrate
Thin-film circuit substrates, high-precision patterning
T/R module chipset
Ku-band T/R component chipset, high integration
I/Q Modulator Chip
L-band I/Q modulator chip
Laser Diode Chip
FP laser diode chip, multi-longitudinal mode
Multi-channel RF chip
8-channel multi-channel RF chip, S-band
Inverted bump fabrication
Wafer-Level Flip-Chip Bumping Services
T/R module chipset
Ka-band T/R module chipset, millimeter wave
I/Q Modulator Chip
S-band I/Q modulator chip
VCSEL laser
85nm VCSEL Laser Array
Smart Skin RF Component
Conformal Intelligent Skin RF Components
Gold wire bonding interconnect
Gold wire bonding interconnect technology, high reliability
T/R Multi-Function Chip
4-channel T/R multi-function chip, L-band
I/Q demodulator chip
C-band I/Q demodulator chip
VCSEL laser
940nm VCSEL Laser for 3D Sensing
Heterogeneous Integrated RF Module
Si+GaAs Heterogeneous Integration RF Module
Strip welding interconnect
Strip welding interconnects for high-current applications
T/R Multi-Function Chip
Dual-channel T/R Multi-function Chip, S-Band
I/Q demodulator chip
X-band I/Q Demodulator Chip
Semiconductor Optical Amplifier
SOA Semiconductor Optical Amplifier, C-Band
System-level packaged RF module
SiP RF Module: Multi-Function
Conductive adhesive bonding
Conductive adhesive bonding process, low-temperature curing
T/R Multi-Function Chip
Four-channel T/R multifunction chip, C-band
Phase-Locked Loop Frequency Source
L-band PLL frequency source, low phase noise
Electro-optic modulator chip
LiNbO3 Mach-Zehnder electro-optic modulator chip
Micro RF Subsystem
Micro RF subsystem, complete solution
Eutectic Soldering
Eutectic Soldering Process for High Thermal Conductivity Applications
T/R Multi-Function Chip
Four-channel T/R multifunction chip, X-band
Phase-Locked Loop Frequency Source
S-band PLL frequency source
Electro-optic modulator chip
Silicon Photonic Electro-Optic Modulator Chip
Reconfigurable RF Front-End
Frequency-Reconfigurable RF Front-End
Airtight Enclosure
Metal hermetically sealed enclosure, corrosion-resistant
T/R Multi-Function Chip
Four-channel T/R multi-function chip, Ku band
Phase-Locked Loop Frequency Source
C-band PLL frequency source
Optical Switch Chip
MEMS optical switch chip, 1×N
Cognitive Radio RF Chip
Cognitive Radio RF Front-End Chip
Ceramic Package Enclosure
Alumina ceramic package housing with excellent high-frequency performance
T/R Multi-Function Chip
4-Channel T/R Multi-Function Chip, Ka-Band
Phase-Locked Loop Frequency Source
X-band PLL frequency source
Optical Switch Chip
Thermo-optic switch chip, 2×2
Software-Defined Radio RF Front-End
SDR Software-Defined Radio RF Front-End
Molding compound encapsulation
Epoxy molding process, low-cost
Digital Beamforming Chip
8-channel digital beamforming chip, L-band
Direct Digital Synthesizer
DDS Direct Digital Synthesizer, High Resolution
WDM chip
AWG Arrayed Waveguide Grating, 1×N
Phased Array Feeding Network
Multibeam phased array feed network
Potting compound filling
Polyurethane potting compound filling for shock and water resistance
Digital Beamforming Chip
16-channel digital beamforming chip, S-band
Frequency Multiplier Chip
X2 Multiplier Chip, Broadband
WDM chip
Thin-film filter WDM
Active antenna integrated module
Active Antenna Integrated Module
Heat Sink Substrate
High Thermal Conductivity Substrate for Power Devices
Active Phased Array T/R Module
S-band active phased array T/R module, high power
Frequency Multiplier Chip
X3 Multiplier Chip
Optocoupler Chip
1×N Optical Coupler, Split Ratio Optional
Microwave Photonic Link Module
Microwave Photonics Link Module, Analog Optical Transmission
Electromagnetic Shielding Can
Metal electromagnetic shielding enclosure, suppresses interference
Active Phased Array T/R Module
C-band active phased array T/R module
Frequency Divider Chip
÷2 High-Speed Divider Chip
Optical Isolator Chip
In-line optical isolator, low loss
Terahertz Front-End Components
Terahertz Front-End Components, Submillimeter Wave
Radar-absorbing material patch
Flexible microwave-absorbing patch to reduce reflection
Active Phased Array T/R Module
X-band Active Phased Array T/R Module
Frequency Divider Chip
÷4 Divider Chip
Optical Attenuator Chip
VOA Variable Optical Attenuator, Electrically Controlled
RF components for quantum key distribution
QKD Quantum Key Distribution RF Components
Thermal Interface Material
High-performance thermal interface material for reduced thermal resistance
Active Phased Array T/R Module
Ku-band active phased array T/R module
Mixer Component
L-band Upconverter Mixer Module
Fiber Optic Gyroscope Chip
Integrated optical fiber optic gyro chip
RF MEMS Switch Matrix
RF MEMS Switch Matrix, Multi-Channel
Active Phased Array T/R Module
Ka-band active phased array T/R module
Mixer Component
X-band downconverter mixer assembly
LiDAR receiver chip
FMCW LiDAR Receiver Chip
Metamaterial RF Devices
Metamaterial RF Devices with Unique Electromagnetic Properties
GaN T/R Module
X-band GaN T/R Module, Ultra-High Power
Frequency synthesizer
Wideband Frequency Synthesizer, Multi-band
LiDAR transmitter chip
Solid-state LiDAR transmitter chip
GaN T/R Module
C-band GaN T/R Module
OCXO Oven-Controlled Crystal Oscillator
OCXO Oven-Controlled Crystal Oscillator, Ultra-Low Phase Noise
Quantum Dot Laser
Quantum dot laser chip, low threshold
T/R Module Power Management IC
Multi-channel T/R component power management chip
TCXO Temperature-Compensated Crystal Oscillator
TCXO Temperature-Compensated Crystal Oscillator, High Stability
Single-photon detector
InGaAs/InP Single-Photon Detector
T/R component control chip
T/R module digital control chip with integrated driver
Single-photon detector
Si single-photon detector, visible light
Limited Low-Noise Amplifier Component
L-band limited low-noise amplifier component, high tolerance
Optoelectronic Integrated Transceiver Chip
100G Optical-Electrical Integrated Transceiver Chip
Limited Low-Noise Amplifier Component
S-band Limiting LNA Module
Optoelectronic Integrated Transceiver Chip
400G Optical-Electrical Integrated Transceiver Chip
Drive Amplifier Component
X-band Drive Amplifier Component, High Linearity
Silicon Photonic Modulator
Silicon Photonics IQ Modulator Chip
Power Amplifier Module
Ku-band power amplifier module
Silicon Photonic Coherent Receiver
Silicon Photonics Coherent Receiver Chip
Numerical Control Phase Shifting Module
6-bit digital phase shifter, broadband
Photonic Computing Chip
Photonic Neural Network Computing Chip
Digital Attenuation Module
6-bit digital step attenuator, low phase shift
Quantum light source chip
Entangled Photon Pair Source Chip
optical frequency comb chip
Microcavity Optical Frequency Comb Chip
Biophoton Sensor
Integrated biosensing photonic chip
Photonic-Electronic Fusion Computing Module
Photonic-Electronic AI Computing Module
S-band transceiver system
Radar backend transceiver with 76 receive channels and 2 transmit channels, featuring an integrated local oscillator, agile frequency hopping, and ultra-low phase noise.
RF Front-End Components
2~{1.8GHz single-port input signal is split into three bands by a diplexer, filtered and amplified, with each band output via an independent port.
RF Front-End Matrix
Route the three RF signal bands from 2~4GHz, 4~8GHz, and 8~18 GHz through a switched amplifier circuit, then output via a switch matrix and digitally controlled attenuator.
Broadband Receiving Front-End
Covers a wide frequency band from 0.8 to 18 GHz, providing signal limiting, filtering, amplification, and attenuation for RF signals, with built-in BIT detection capabilities.
2-18GHz Up/Down Converter Module
VPX 3U standard plug-in module featuring 2 downconverters and 1 upconverter + 1 downconverter, with built-in local oscillator.
X-band radar channel
Up-converts the 140MHz±20MHz IF to a 8.5~10.5GHz RF output, while down-converting the 8.5~10.5GHz RF to a 140MHz±20MHz IF.
X-band phased array frequency-agile channel
Route the signals from the 9~1 GHz array antenna through the power combining network and downconverters to the signal processing unit, achieving 3 downconversion channels, 1 upconversion channels, and 1 local oscillator sources.
2-18GHz Dual-Channel Frequency Converter
Each channel performs three down-conversions on the input RF signal to output IF signals in the 1.3~2.3 GHz and 535MHz bands, while simultaneously performing logarithmic video detection on the input RF signal.
Ku-band 2 8 cm Antenna Array Frequency-Conversion Channel
Route the 15.5~{1.5} GHz array antenna signal through a power combiner and downconverter to the signal processing section.
Switch Filter Bank
17–4 GHz band, 6-channel switchable filter bank with 3-bit LVTTL control for high-speed switching across 6 channels
2~18 GHz Logarithmic Video Detector (DLVA)
Standard DLVA module implementing large dynamic range RF detection from 2 to 18 GHz, with a dynamic range of -70 to +5 dBm.
6~18 GHz Switched Filter Assembly
6~18GHz 8-band switchable filter assembly that splits the input signal into 8 frequency bands via a switch for filtering, then selects and outputs one band through the switch.
AP24T Component (0.5–18 GHz SP{T2} Switch)
0.5~18GHz Single-Pole 24-Throw Switch, 1 Input with 24-Way Output Selection
HBR broadband switch filter detector module
Splits 2~18GHz into 4 segments, applies switching filtering, and outputs a single channel. Includes built-in DLVA module and self-test source.
2~8GHz frequency source
Outputs 8-channel continuous wave or standard pulse signals with 5MHz steps and output power of 5±3dBm