Silicon Carbide Devices
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SiC MOSFET 1700V Series
CETC 55 Institute SiC MOSFET 1700V Series, designed for high-voltage applications including photovoltaic string inverters, energy storage systems, rail transit auxiliary power supplies, and industrial high-power power supplies. Available in both plastic and metal hermetic packages; the 1000mΩ version features a compact SOT-223-3 package.
SiC MOSFET 1200V Series
CETC 55th Institute SiC MOSFET 1200V Series – China's first mass-produced 1200V SiC MOSFET product line with fully validated planar process reliability. Performance matches top-tier competitors like Cree, ST, and Onsemi, with a superior on-resistance temperature coefficient. Available in plastic, metal-can, and bare die packages for applications including main drive inverters in new energy vehicles, PV inverters, energy storage PCS, and industrial power supplies. Over 1400k units shipped; AEC-Q101 qualified.
SiC Ultra-High-Voltage MOSFET (3300V~10000V)
CETC 55th Institute's SiC super-high-voltage MOSFETs feature high single-chip voltage ratings and fast switching speeds. Compared to IGBTs, they reduce volume, weight, and power losses by over 90%. Ideal for high-voltage power supplies, module packaging, rail transit, and high-voltage transmission applications. Available in 3300V, 6500V, 10000V, and other specifications.
SiC MOS Module Products
CETC 55th Institute SiC MOS modules offer three topologies: SMPD-packaged half-bridge, DIP-packaged H-bridge, and DIP-packaged three-phase bridge. The SMPD package features top-side cooling with integrated insulation rated at 3kVrms. The dual-in-line (DIP) package ensures low impedance, optimal thermal resistance, and high-voltage isolation for bus voltages up to 800V. The three-phase bridge module uses a Cu-AlN-Cu DBC substrate to enhance thermal management. Ideal for electric vehicle drives, charging stations, energy storage PCS, and industrial variable frequency drives.
SiC High-Current Module
CETC 55th Institute SiC high-current MOS modules feature easy-to-install packaging, extremely low thermal resistance, and excellent heat dissipation. Ideal for high-current, high power density applications. Available in SOT-227 packages.
SiC Schottky Diode (650V~20000V)
CETC 55th Institute's SiC Schottky Barrier Diodes (SBD), fourth-generation products, deliver optimal performance in current density and surge current compared to leading international brands like Cree, Rohm, ST, and Onsemi. Features include low switching loss, zero reverse recovery, and high-temperature/high-voltage tolerance, making them ideal replacements for traditional Si fast-recovery diodes. Available in plastic packages (TO-252/TO-263/TO-220/TO-247/DFN, etc.), gold-sealed SMD series, and bare die options. Covers a full voltage range of 650V~20000V and current ratings from 1A to 200A. Ideal for photovoltaic inverters, new energy vehicles, switch-mode power supplies, and industrial variable-frequency drives.
SiC Detectors (UV Detection / Nuclear Detection)
CETC 55 Institute's SiC detectors leverage the inherent high-temperature and radiation-hardness advantages of silicon carbide, delivering products for nuclear detection and UV detection. In nuclear detection, SiC semiconductor detectors replace traditional silicon-based ones, offering superior high-temperature and radiation resistance. For UV detection, they feature a spectral response range of 200~380 nm (solar-blind), excellent temperature stability, fast response speed, and low dark current. Ideal for applications such as UV index monitoring, flame detection, and environmental monitoring. We offer custom processing for 6-inch SiC detectors.
SiC radiation-hardened devices
CETC 55th Institute's SiC radiation-hardened devices, including SiC radiation-hardened diodes and MOSFETs. SiC materials inherently exhibit superior radiation tolerance, making them ideal for high-radiation environments such as aerospace and nuclear industries. The SiC diodes have passed radiation testing; the SiC MOS radiation-hardened product is currently under development.